Title of article :
Atomistic computer simulation of oxygen ion conduction mechanisms in La2NiO4
Author/Authors :
Cleave، نويسنده , , A.R. and Kilner، نويسنده , , J.A and Skinner، نويسنده , , S.J. and Murphy، نويسنده , , S.T. and Grimes، نويسنده , , R.W.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2008
Abstract :
Atomistic computer simulation has been used to predict the most energetically favourable migration pathways for oxygen ion transport in tetragonal La2NiO4. Both interstitial and vacancy mechanisms have been investigated. All of the vacancy mechanisms studied exhibited lower activation energies than the interstitial process. The lowest energy process allowed migration in the a–b plane with an activation energy of 0.35 eV, migration along the c-axis was predicted to have an activation energy of 0.77 eV and interstitial migration in the a–b plane was found to have an energy barrier of 0.86 eV (in agreement with available experimental data).
Keywords :
Computer simulation , Oxygen migration , La2NiO4 , K2NiF4
Journal title :
Solid State Ionics
Journal title :
Solid State Ionics