Phase formation and stability of polycrystalline NaxGa4 + xTi1 − xO8, (x ~ 0.7)

The formation and stability of polycrystalline NaxGa4 + xTi1 − xO8, (x ~ 0.7) was examined. High temperature x-ray diffraction (HTXRD) showed that NaxGa4 + xTi1 − xO8, (x ~ 0.7), begins to form from component oxides and carbonates at ~ 950 °C and shows complete reaction within 24 h while being held at 1050 °C. The desired Na0.7Ga4.7Ti0.3O8 phase remains only nominally phase pure with residual gallium oxide identifiable. Further heating of the reacted material results in the decomposition of the material beginning at ~ 1200 °C in which Ga2O3 and other intermediate phases are seen in the diffraction pattern.