Title of article
Nitrogen flow rate as a new key parameter for the nitridation of electrolyte thin films
Author/Authors
Hamon، نويسنده , , Y. and Vinatier، نويسنده , , P. and Kamitsos، نويسنده , , E.I. and Dussauze، نويسنده , , M. and Varsamis، نويسنده , , C.P.E. and Zielniok، نويسنده , , D. and Roesser، نويسنده , , C. and Roling، نويسنده , , B.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2008
Pages
4
From page
1223
To page
1226
Abstract
This work presents an investigation of the role of the nitrogen flow rate on the composition, structure and ionic conductivity of thin films prepared by reactive radio-frequency (rf) sputtering of lithium metaborate targets. It was found that sputtering at constant nitrogen pressure but with increasing nitrogen flow rate leads to thin films with significantly increased nitrogen content. The effect of nitridation on the borate network has been studied by infrared transmittance spectroscopy and revealed boron–nitrogen bonding in triangular arrangements of the glass network, followed by a parallel destruction of borate tetrahedral units. The ionic conductivity of thin films was also measured and found to increase with the nitrogen amount in the film.
Keywords
Nitridation , reactive sputtering , Borate glasses , solid electrolyte
Journal title
Solid State Ionics
Serial Year
2008
Journal title
Solid State Ionics
Record number
1720762
Link To Document