• Title of article

    Nitrogen flow rate as a new key parameter for the nitridation of electrolyte thin films

  • Author/Authors

    Hamon، نويسنده , , Y. and Vinatier، نويسنده , , P. and Kamitsos، نويسنده , , E.I. and Dussauze، نويسنده , , M. and Varsamis، نويسنده , , C.P.E. and Zielniok، نويسنده , , D. and Roesser، نويسنده , , C. and Roling، نويسنده , , B.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    1223
  • To page
    1226
  • Abstract
    This work presents an investigation of the role of the nitrogen flow rate on the composition, structure and ionic conductivity of thin films prepared by reactive radio-frequency (rf) sputtering of lithium metaborate targets. It was found that sputtering at constant nitrogen pressure but with increasing nitrogen flow rate leads to thin films with significantly increased nitrogen content. The effect of nitridation on the borate network has been studied by infrared transmittance spectroscopy and revealed boron–nitrogen bonding in triangular arrangements of the glass network, followed by a parallel destruction of borate tetrahedral units. The ionic conductivity of thin films was also measured and found to increase with the nitrogen amount in the film.
  • Keywords
    Nitridation , reactive sputtering , Borate glasses , solid electrolyte
  • Journal title
    Solid State Ionics
  • Serial Year
    2008
  • Journal title
    Solid State Ionics
  • Record number

    1720762