• Title of article

    High oxide-ion conductivity of monovalent-metal-doped bismuth vanadate at intermediate temperatures

  • Author/Authors

    Taninouchi، نويسنده , , Yu-ki and Uda، نويسنده , , Tetsuya and Ichitsubo، نويسنده , , Tetsu and Awakura، نويسنده , , Yasuhiro and Matsubara، نويسنده , , Eiichiro، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2010
  • Pages
    5
  • From page
    719
  • To page
    723
  • Abstract
    Li- and Ag-doped Bi2VO5.5 were synthesized by solid-state reactions, and their high oxide-ion conductivities at intermediate temperatures between 400 and 600 °C were demonstrated. Li- and Ag-doped Bi2VO5.5 show a higher symmetry than Bi2VO5.5 at room temperature. In Bi2(V0.9Li0.1)O5.3 and Bi2(V0.9Ag0.1)O5.3, the tetragonal γ-phase, i.e., the high-temperature and disordered phase of Bi2VO5.5, is stabilized at room temperature. AC impedance spectroscopy reveals that Li- and Ag-doping markedly improve the electrical conductivity of Bi2VO5.5 below 570 °C. The dominant charge carrier is confirmed as oxide ions from impedance spectra, DC polarization measurements, and conductivity change with oxygen partial pressure. At around 500 °C, the oxide-ion conductivities of Li- and Ag-doped Bi2VO5.5 are 2−5 times higher than that of La0.8Sr0.2Ga0.8Mg0.115Co0.085O3, which is one of the best oxide-ion conductors.
  • Keywords
    BIMEVOX , Bi2VO5.5 , electrical conductivity , Oxide-ion conductor , Doping
  • Journal title
    Solid State Ionics
  • Serial Year
    2010
  • Journal title
    Solid State Ionics
  • Record number

    1721825