On the some electrical properties of the non-ideal PPy/p-Si/Al structure

The electrical analysis of the PPy/p-Si structure has been investigated by means of I–V, C–V and C–f measurements. The diode ideality factor and the barrier height have been obtained to be n=1.78 and Φb=0.69 eV by applying a thermionic emission theory, respectively. At high current densities in the forward direction, the series resistance effect has been observed. In general, the barrier height obtained from C–V data is greater than obtained from the I–V. This has been explained by introducing a spatial distribution of barrier heights (BHs) due to barrier height inhomogeneities that present at the PPy/p-Si interface. The C–f measurements of the structure have been performed at various biases and it has been seen that they have a good agreement between experimental and theoretical values. The interface state density Nss and relaxation time τ of the structure have been determined from the C–f characteristics.