Abstract :
We apply the Fokker–Planck approach (FPA), where electronic transport is modeled as a drift-diffusion process in energy space, in the calculation of transport properties of bulk Si for a moderately high electric field along the 〈111〉 direction. The main goal is to test the FPA by comparing the experimental and Monte Carlo data with the FPA results for a well-known semiconductor. As a consequence, a reliable basis for the discussion of the validity and limitations of the FPA would be provided in a realistic model of a well-known semiconductor.
