Abstract :
SiC/Si heterostructures formed by C + implantation into Si with different implant energy (35 and 65 keV) were studied by spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (XTEM). The measured SE spectra (2.3–5.0 eV) were analyzed with appropriate multi-layer models and the Bruggeman effective medium approximation (B-EMA). The results showed that the measured spectra could be well simulated by using a multi-layer structure model. The thickness and composition of the layers were determined. Optical constants (n and k values) of the buried β-SiC formed by ion beam synthesis in photon energy of 2.3–5.0 eV were first obtained by SE calculation.
