Abstract :
A phenomenological kinetic equation is proposed to describe a process of a hexavacancy (V6) orientation in silicon samples. The orientation kinetics of V6 was investigated under a uniaxial compressional stress along the [111] axis of the crystal. Parameters appeared in the matrix equation of the orientation kinetics of V6 as functions of pressure and annealing temperature were obtained and their values were estimated. In the case of the inequivalent V6 centers, the pressure dependence of the difference in the magnitude of their binding energies was determined.
