Abstract :
This work presents a single-electron differential amplifier (SEDA), inverter, and non-inverter based on the triple single-dopant quantum-dot (TSDQD) configuration, with new structures. The competition between the field-induced and confinement-related shifts in the wavefunction of the quantum dots yields a field-controllable spatial-displacement single-electron transistor. Deeper impurity levels in quantum dots promise a higher operating temperature and higher on/off current ratios. The I – V characteristics of the device, studied using the transfer Hamiltonian approach (THA), show that the ratio of on/off currents is >80 000 and the voltage gain is > 4 eV D D / Ry ∗ , where V D D is the applied voltage.
