Abstract :
A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF4) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF4 NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF4 nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF4 NRLs are one of the promising materials for next-generation nonvolatile memory applications.
