Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
5
From page :
5
To page :
9
Abstract :
A Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure grown on a Ge-on-Si virtual substrate (Ge-VS) was characterized by using temperature dependent piezoreflectance (PzR) technique. Signals from every relevant portion of the sample, including Ge-VS, MQW and barriers were observed. The band gap blue-shifted and valence band splitting in the vicinity of the direct band-edge transitions of Ge revealed that the Ge-VS is compressively strained. A comprehensive analysis of the PzR spectra led to the identification of various quantum-confined interband transitions. In addition, the parameters that describe the temperature dependence of the excitonic transition energies were evaluated and found to be similar to that of the bulk Ge.
Journal title :
Acta Tropica
Serial Year :
2013
Journal title :
Acta Tropica
Record number :
1751302
Link To Document :
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