Title of article
White-light-controlled resistive switching effect in [BaTiO3/γ-Fe2O3]/ZnO film
Author/Authors
Zhao، نويسنده , , W.X. and Li، نويسنده , , Q.L. and Sun، نويسنده , , B. and Shen، نويسنده , , Z. and Liu، نويسنده , , Y.H. and Chen، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
4
From page
16
To page
19
Abstract
White-light-controlled resistive switching effect in [BaTiO3/γ-Fe2O3]/ZnO film was investigated. Resistive switching effect in the [BaTiO3/γ-Fe2O3]/ZnO film was observed. The resistive switching effect becomes stronger when subjected to white light irradiation. In addition, the resistive switching effect becomes stronger with increase in annealed temperature. At the same time, resistive switching shows a strong dependence on the thickness of the [BaTiO3/γ-Fe2O3] layer.
Keywords
A. Thin films , D. Resistive switching effect , E. White-light-controlled
Journal title
Solid State Communications
Serial Year
2014
Journal title
Solid State Communications
Record number
1751784
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