Title of article :
White-light-controlled resistive switching effect in [BaTiO3/γ-Fe2O3]/ZnO film
Author/Authors :
Zhao، نويسنده , , W.X. and Li، نويسنده , , Q.L. and Sun، نويسنده , , B. and Shen، نويسنده , , Z. and Liu، نويسنده , , Y.H. and Chen، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Abstract :
White-light-controlled resistive switching effect in [BaTiO3/γ-Fe2O3]/ZnO film was investigated. Resistive switching effect in the [BaTiO3/γ-Fe2O3]/ZnO film was observed. The resistive switching effect becomes stronger when subjected to white light irradiation. In addition, the resistive switching effect becomes stronger with increase in annealed temperature. At the same time, resistive switching shows a strong dependence on the thickness of the [BaTiO3/γ-Fe2O3] layer.
Keywords :
A. Thin films , D. Resistive switching effect , E. White-light-controlled
Journal title :
Solid State Communications
Journal title :
Solid State Communications
