Title of article :
High-TC ferromagnetism in multilayer Zn/ZnO films induced by native defects
Author/Authors :
Zhang، نويسنده , , Xiao and Sun، نويسنده , , Huijie and Zhang، نويسنده , , Xinghua and Zhang، نويسنده , , Wei and Xu، نويسنده , , Xuewen and Meng، نويسنده , , Fanbin and Tang، نويسنده , , C.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
4
From page :
16
To page :
19
Abstract :
We synthesized dual-layer and hex-layer Zn/ZnO films by magnetron sputtering and ferromagnetism is found in both of them. In the dual-layer Zn/ZnO film, the saturated magnetization significantly decreases with increasing temperature and the ferromagnetic behavior disappears at 600 °C accompanying with apparent shrinkage of c-axial lattice parameter. In contrast, the ferromagnetic behavior in hex-layer Zn/ZnO film is still remarkable at 600 °C and the change of c-axial lattice parameter with temperature is not obvious. These results indicate that Zn interstitial defect as well as the heterostructure of Zn/ZnO dominates the evolution of ferromagnetism.
Keywords :
C. Multilayer , D. Room temperature ferromagnetism , A. Diluted magnetic semiconductor , B. Magnetron sputtering
Journal title :
Solid State Communications
Serial Year :
2014
Journal title :
Solid State Communications
Record number :
1751891
Link To Document :
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