• Title of article

    Resonant Raman scattering in MoS2—From bulk to monolayer

  • Author/Authors

    Go?asa، نويسنده , , K. and Grzeszczyk، نويسنده , , M. and Bo?ek، نويسنده , , R. and Leszczy?ski، نويسنده , , P. and Wysmo?ek، نويسنده , , A. and Potemski، نويسنده , , M. and Babi?ski، نويسنده , , A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2014
  • Pages
    4
  • From page
    53
  • To page
    56
  • Abstract
    Resonant Raman scattering in molybdenum disulfide (MoS2) is studied as a function of the structure thickness. Optical emission from bulk, three-, two-, and one- monolayer MoS2 is studied both at room and at liquid helium temperature. The quenching of peaks due to second-order processes was observed and attributed to the effect of the substrate on the lattice dynamics in MoS2. The experimental results are discussed within the frames of the recently proposed model of electron–phonon coupling involving transverse acoustic phonons from the vicinity of the high-symmetry M point of the MoS2 Brillouin zone.
  • Keywords
    A. Semiconductors , D. Raman scattering
  • Journal title
    Solid State Communications
  • Serial Year
    2014
  • Journal title
    Solid State Communications
  • Record number

    1751918