Author/Authors :
Ferrand، نويسنده , , D. and Wasiela، نويسنده , , A. and Tatarenko، نويسنده , , S. and Cibert، نويسنده , , J. and Richter، نويسنده , , G. and Grabs، نويسنده , , P. and Schmidt، نويسنده , , G. and Molenkamp، نويسنده , , L.W. and Dietl، نويسنده , , T.، نويسنده ,
Abstract :
The discovery of carrier induced ferromagnetism in p-type doped diluted magnetic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga1−xMnxAs, as well as the demonstration of high spin injection efficiency observed from II–VI and III–V DMS [1,2] have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experiments we have performed on spin injection light emitting diodes using an n-type doped II–VI DMS layer as spin aligner and on p-type doped II–VI magnetic heterostructures: Cd1−xMnxTe quantum wells and Zn1−xMnxTe epilayers.
