Title of article :
Spin-dependent phenomena in ferromagnetic/nonmagnetic III–V heterostructures
Author/Authors :
Ohno، نويسنده , , Hideo and Matsukura، نويسنده , , Fumihiro and Ohno، نويسنده , , Yuzo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
III–V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with nonmagnetic semiconductor heterostructures and offer opportunities to explore properties that combine conventional semiconductor physics with magnetic cooperative phenomena. Here, we review spin-dependent phenomena observed in III–V-based ferromagnetic semiconductor heterostructures, which include spin-dependent scattering, tunnel magnetoresistance, resonant tunneling with ferromagnetic emitter, spin injection, and electric field control of ferromagnetism.
Keywords :
D. Electronic transport , A. Heterojunctions , D. Tunneling , D. Galvanomagnetic effects
Journal title :
Solid State Communications
Journal title :
Solid State Communications