• Title of article

    Accelerated dynamics simulations of interstitial-cluster growth

  • Author/Authors

    Birner، نويسنده , , Stefan and Kim، نويسنده , , Jeongnim and Richie، نويسنده , , David A. and Wilkins، نويسنده , , John W. and Voter، نويسنده , , Arthur F. and Lenosky، نويسنده , , Thomas، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    4
  • From page
    279
  • To page
    282
  • Abstract
    We apply parallel replica dynamics to simulate the growth of silicon interstitial clusters. Existing interstitial clusters are efficient traps for mobile interstitial and di-interstitial defects. For clusters involving more than four interstitials, many metastable structures are achieved by local bonding rearrangements. The shape of interstitial nuclei critically determines the final interstitial clusters. Once an elongated cluster is formed, additional captured interstitials diffuse in the chain direction and eventually settle at the chain ends, resulting in further elongation.
  • Keywords
    A. Semiconductors , D. Phase transitions , D. Recombination and trapping
  • Journal title
    Solid State Communications
  • Serial Year
    2001
  • Journal title
    Solid State Communications
  • Record number

    1761712