Title of article
Annealing effects on the phase and microstructure transformations of nanocrystalline (ZrO2)1−x(Sc2O3)x (x=0.02–0.16) thin films deposited by sol–gel method
Author/Authors
Zhang، نويسنده , , Yawen and Jin، نويسنده , , Shu and Yang، نويسنده , , Yu and Liao، نويسنده , , Chunsheng and Yan، نويسنده , , Chunhua، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
439
To page
444
Abstract
Annealing effects on the phase and microstructure transformations of the sol–gel derived nanocrystalline (ZrO2)1−x(Sc2O3)x (x=0.02–0.16) films with the thickness of 0.6 μm on Si(100) substrate were investigated by X-ray diffraction and scanning electron microscopy. At annealing temperatures below 800 °C, the presence of a tetragonal or cubic phase for all the films was yielded due to the crystallite size effect. However, at higher temperatures, the determined phase compositions of the as-deposited films support that of the Sc-doped zirconia polycrystalline. After long annealing times, the films with x=0.02 and 0.08 displayed a phase decomposition, attributed to the metastability of the Sc-doped zirconia nanocrystals. On the other hand, both increasing annealing temperature and time could induce grain growth for a given film.
Keywords
B. Chemical synthesis , D. Phase transitions , A. Thin films , A. Nanostructures
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1762262
Link To Document