Title of article
Photoluminescence studies of isotopically enriched silicon: isotopic effects on the indirect electronic band gap and phonon energies
Author/Authors
Karaiskaj، نويسنده , , D. and Thewalt، نويسنده , , M.L.W. and Ruf، نويسنده , , T. and Cardona، نويسنده , , M. and Konuma، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
87
To page
92
Abstract
We have performed high-resolution photoluminescence spectroscopy on silicon crystals with different isotopic composition and investigated the effects of this composition on the indirect electronic band gap and phonon energies. From the relative energy shift of the indirect electronic band gap between two crystals of different isotopic composition, the zero-point renormalization energy of that electronic band gap was estimated. The experimentally determined phonon frequency shifts between crystals of different isotopic composition are compared with theoretically predicted frequency shifts. We further present a detailed analysis of the different contributions leading to the observed phonon frequency shifts.
Keywords
A. Isotopic silicon , B. Excitons bound to impurities , E. Luminescence , B. Phonons
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1762342
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