Title of article
An ultrasound emitter based on assisted tunneling
Author/Authors
Foa Torres، نويسنده , , L.E.F. and Pastawski، نويسنده , , H.M. and Makler، نويسنده , , S.S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
9
From page
363
To page
371
Abstract
The problem of electron tunneling assisted by an elementary excitation in a double barrier resonant device is usually described within a sequential (decoherent) approximation. By solving exactly the many-body problem for a simplified model of electron–phonon interaction we show, analytically and numerically, that the assisted tunneling peak can be strongly enhanced by an appropriate election of the geometrical parameters of the device. This induces a symmetry condition in the Fock space that maximizes the effectiveness of the scattering process. We propose that this process could provide the primary longitudinal optical phonons required to operate a phonon laser (SASER).
Keywords
A. Nanostructures , A. Quantum wells , A. Semiconductors , D. Saser , D. phonons
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1762549
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