Title of article :
Heteroepitaxial growth of single-phase zinc blende ZnS films on transparent substrates by pulsed laser deposition under H2S atmosphere
Author/Authors :
Hiramatsu، نويسنده , , Hidenori and Ohta، نويسنده , , Hiromichi and Hirano، نويسنده , , Masahiro and Hosono، نويسنده , , Hideo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
5
From page :
411
To page :
415
Abstract :
Zinc sulfide (ZnS) films were grown on transparent yittria-stabilized-zirconia (YSZ) substrates by pulsed laser deposition. Deposition at 500 °C in a H2S/Ar mixed gas atmosphere of 10 Pa on YSZ(111) substrate resulted in epitaxial growth of a single-phase cubic transparent ZnS film. X-ray reciprocal space mappings and optical spectroscopy clearly indicate that the film is composed of single-phase zinc blende.
Keywords :
E. X-ray and -ray spectroscopies , D. Optical properties , A. Semiconductors , B. Epitaxy
Journal title :
Solid State Communications
Serial Year :
2002
Journal title :
Solid State Communications
Record number :
1762569
Link To Document :
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