Title of article :
Manipulation of spin dephasing in InAs quantum wires
Author/Authors :
Cheng، نويسنده , , J.L. and Weng، نويسنده , , M.Q. and Wu، نويسنده , , M.W.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
365
To page :
368
Abstract :
The spin dephasing due to the Rashba spin–orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field (AMF). The nonlinearity in spin dephasing time versus the direction of the electric field shows the potential to manipulate the spin lifetime in spintronic device. Moreover, we figure out a quantity that can well represent the inhomogeneous broadening of the system which may help us to understand the many-body spin dephasing due to the Rashba effect.
Keywords :
A. Semiconductors , D. Spin dynamics
Journal title :
Solid State Communications
Serial Year :
2003
Journal title :
Solid State Communications
Record number :
1762873
Link To Document :
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