Title of article :
Calculation of bound and resonant donor states of GaAs in a magnetic field
Author/Authors :
Nilsson، نويسنده , , K. J. Blom، نويسنده , , A. and Shlyapin، نويسنده , , V.V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
The effect of a magnetic field on the energy spectrum of a hydrogenic impurity is investigated using a basis expansion technique. Several excited impurity states, of which some are resonant, are found. Lifetimes are calculated and, by including an electric field, we are able to explain forbidden but experimentally observed optical transitions.
Keywords :
A. III–V semiconductors , D. Resonant states , D. Lifetime , D. Landau levels , C. Impurities in semiconductors
Journal title :
Solid State Communications
Journal title :
Solid State Communications