Author/Authors :
Kaminska، نويسنده , , E. and Piotrowska، نويسنده , , A. and Kossut، نويسنده , , J. and Barcz، نويسنده , , A. and Butkute، نويسنده , , R. and Dobrowolski، نويسنده , , W. and Dynowska، نويسنده , , E. and Jakiela، نويسنده , , R. and Przezdziecka، نويسنده , , E. and Lukasiewicz، نويسنده , , R. and Aleszkiewicz، نويسنده , , M. and Wojnar، نويسنده , , P. and Kowalczyk، نويسنده , , E.، نويسنده ,
Abstract :
We report on the fabrication of thin ZnO:N film by thermal oxidation of zinc nitride layers sputter-deposited on quartz, sapphire, GaN, and ZnO surfaces. Through optimising several crucial technological steps we have achieved p-type conductivity with the carrier concentration in mid 1017 cm−3 range and mobility of ∼10 cm2/Vs. Rich photoluminescence spectra have been observed in the region corresponding to the fundamental energy gap region with peaks that can be related to acceptor bound exciton transitions. The transmittance of p-ZnO:N in the whole visible spectrum is ∼80%.
Keywords :
A. Semiconductors , D. Electronic transport , D. Optical properties , B. Crystal growth
