Title of article
Ab initio study of pressure-induced phase transitions in the ordered Si50Ge50 alloy
Author/Authors
Lv، نويسنده , , M.Y. and Chen، نويسنده , , Z.W. and Liu، نويسنده , , R.P. and Wang، نويسنده , , W.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
749
To page
752
Abstract
First principles pseudopotential approaches are used to investigate the structural phase transitions of ordered Si50Ge50 alloy from zincblende to β-Sn to Imma then to simple hexagonal phase under high-pressure, the transition pressure of which are 12.3, 17.8 and 44.5 GPa, respectively. The electronic and structural properties of the four phases are also calculated.
Keywords
A. Si50Ge50 alloy , E. High pressure , D. Phase transition
Journal title
Solid State Communications
Serial Year
2005
Journal title
Solid State Communications
Record number
1763298
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