• Title of article

    The origin of additional modes in Raman spectra of N+-implanted ZnO

  • Author/Authors

    Yu، نويسنده , , Jianguo and Xing، نويسنده , , Huaizhong and Zhao، نويسنده , , Li-Qiang and Mao، نويسنده , , Huibing and Shen، نويسنده , , Ye and Wang، نويسنده , , Jiqing and Lai، نويسنده , , Zongsheng and Zhu، نويسنده , , Ziqiang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    3
  • From page
    502
  • To page
    504
  • Abstract
    Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm−1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm−1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm−1 peak. We assign the additional modes to N+-related local vibrational modes.
  • Keywords
    D. Local vibrational mode , A. ZnO , C. Raman scattering , D. Ion implantation
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1763436