Title of article :
The origin of additional modes in Raman spectra of N+-implanted ZnO
Author/Authors :
Yu، نويسنده , , Jianguo and Xing، نويسنده , , Huaizhong and Zhao، نويسنده , , Li-Qiang and Mao، نويسنده , , Huibing and Shen، نويسنده , , Ye and Wang، نويسنده , , Jiqing and Lai، نويسنده , , Zongsheng and Zhu، نويسنده , , Ziqiang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm−1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm−1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm−1 peak. We assign the additional modes to N+-related local vibrational modes.
Keywords :
D. Local vibrational mode , A. ZnO , C. Raman scattering , D. Ion implantation
Journal title :
Solid State Communications
Journal title :
Solid State Communications