Author/Authors :
Farshchi، نويسنده , , R. and Scarpulla، نويسنده , , M.A. and Stone، نويسنده , , P.R. and Yu، نويسنده , , K.M. and Sharp، نويسنده , , I.D. and Beeman، نويسنده , , J.W. and Silvestri، نويسنده , , H.H. and Reichertz، نويسنده , , L.A. and Haller، نويسنده , , E.E. and Dubon، نويسنده , , O.D.، نويسنده ,
Abstract :
We report the magnetic and transport properties of Ga1−xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x , namely 0.018–0.042. Like Ga1−xMnxAs, Ga1−xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 ∘C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1−xMnxAs, Ga1−xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x .
