Title of article :
High pressure behaviour of GaCMn3
Author/Authors :
Meenakshi، نويسنده , , S. and Vijayakumar، نويسنده , , V. and Lausi، نويسنده , , A. and Busetto، نويسنده , , E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
3
From page :
500
To page :
502
Abstract :
Results of X-ray powder diffraction measurements up to 35 GPa carried out on GaCMn3 are presented. GaCMn3 does not undergo any structural transition in this pressure region. However, the pressure–volume data can be fitted to two straight line segments in the pressure regions; one from 0 to 5 GPa and another from 5 to 30 GPa respectively.
Keywords :
A. GaCMn3 , D. High pressure , C. ADXRD , B. Diamond anvil cell
Journal title :
Solid State Communications
Serial Year :
2006
Journal title :
Solid State Communications
Record number :
1763625
Link To Document :
بازگشت