Title of article :
Quantum Hall effect in graphene
Author/Authors :
Jiang، نويسنده , , Z. and Zhang، نويسنده , , Y. and Tan، نويسنده , , Y.-W. and Stormer، نويسنده , , H.L and Kim، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
The quantum Hall (QH) effect in two-dimensional electron and hole gas is studied in high quality graphene samples. Graphene samples whose lateral size ∼10 μm were fabricated into mesoscopic devices for electrical transport measurement in magnetic fields. In an intermediate field range of up to 10 T, a distinctive half-integer QH effect is discovered with QH plateaus appearing at a filling factor sequence, ν = 4 ( n + 1 / 2 ) , where n is the Landau level (LL) index. As the magnetic field increases to the extreme quantum limit, we observe additional QH plateaus at filling factors ν = 0 , ± 1 , ± 4 . Further detailed investigations show that the presence of the ν = 0 , ± 1 QH states indicates the n = 0 LL at the charge neutral Dirac point splits into four sublevels. This lifts both the sublattice and the spin degeneracy, while the QH states at ν = ± 4 can be attributed to lifting of the spin degeneracy of the LLs. Above 30 T of magnetic field, the large quasiparticle gaps between the n = 0 and n = ± 1 LLs lead to the QH effect that can be observed even at room temperature.
Keywords :
D. Quantum hall effect , A. Graphene , D. Landau level splitting
Journal title :
Solid State Communications
Journal title :
Solid State Communications