Title of article :
On the upper limit of thermal conductivity GaN crystals
Author/Authors :
Danilchenko، نويسنده , , B.A. and Obukhov، نويسنده , , I.A. and Paszkiewicz، نويسنده , , T. and Wolski، نويسنده , , S. and Je?owski، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
4
From page :
114
To page :
117
Abstract :
The maximal value of thermal conductivity κ max of the perfect wurtzite GaN crystal containing isotopes of natural abundance is estimated. Our upper limit of κ = 4800 W/K m at T max = 32 K is smaller than that calculated by Liu and Balandin κ = 6000 W/K m and higher than that obtained by Slack et al. κ = 3750 W/K m . The phenomenological dependence κ ∝ T − 1.43 obtained by Mion et al. for the temperature interval 300–450 K is extended to 200–300 K. For temperatures higher than T max the best fitting of our experimental data to Callaway’s formula is obtained for Grueneisen’s constant equal to γ = 1.35 .
Keywords :
C. Point defects , D. Heat conduction , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2007
Journal title :
Solid State Communications
Record number :
1763921
Link To Document :
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