• Title of article

    Determination of the optimal thickness of inserted LiF in bilayer organic light-emitting devices

  • Author/Authors

    Li، نويسنده , , Hong-Jian and Zhu، نويسنده , , Ru-Hui and Li، نويسنده , , Xueyong and Wang، نويسنده , , Zhijun and Yang، نويسنده , , Bing-Chu، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    445
  • To page
    449
  • Abstract
    An analytical model to calculate the current–voltage characteristics and the electroluminescence (EL) efficiency of bilayer organic light-emitting devices (OLEDs), considering the influence of introducing a LiF insulating buffer layer at the metal/organic interface on the barrier height for electron injection, is presented. The optimal thickness of inserted LiF in bilayer organic light-emitting devices has been calculated and discussed. According to the J – V curves, the calculated optimal thickness of the LiF layer for OLEDs with a Ag/LiF cathode is about 3.1 nm; The calculated EL efficiency reaches the maximum at L d = 3.1  nm; When the electron injection barrier achieves its minimum value, L d o p t ≈ 2.95  nm. These results indicate that: for devices with a LiF/Ag cathode, the optimal thickness of inserted LiF should be about 3.0 nm; a too thick or too thin LiF layer will increase the turn-on voltage of the OLED and decrease its performance.
  • Keywords
    A. Ag/LiF , D. Bilayer organic light-emitting devices , D. Optimal thickness
  • Journal title
    Solid State Communications
  • Serial Year
    2007
  • Journal title
    Solid State Communications
  • Record number

    1764052