Author/Authors :
Mickevicius، نويسنده , , J. and Tamulaitis، نويسنده , , G. and Vitta، نويسنده , , P. and Zukauskas، نويسنده , , A. and Shur، نويسنده , , M.S. and Zhang، نويسنده , , J. and Yang، نويسنده , , J. M. Gaska، نويسنده , , R.، نويسنده ,
Abstract :
Carrier dynamics in GaN was studied using fluorescence lifetime measurement in the frequency domain technique in the temperature range from 8 to 300 K at very low and very high excitation levels. The study was performed in a high-quality GaN epilayer exhibiting a room-temperature nonequilibrium carrier lifetime of 2 ns, which was determined by a light-induced transient grating (four-wave mixing) technique. The results reveal the roles of donor–acceptor pair recombination and conduction band–acceptor recombination in yellow luminescence band formation.
Keywords :
A. Semiconductors , E. Frequency domain lifetime measurements , E. Light-induced transient grating technique
