Title of article :
Synchrotron X-ray diffraction study of ZnTe at high pressure
Author/Authors :
Onodera، نويسنده , , A. and Ohtani، نويسنده , , A. and Tsuduki، نويسنده , , S. and Shimomura، نويسنده , , O.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
ZnTe has been studied at high pressure to 76 GPa and at room temperature in a diamond-anvil cell using angle-dispersive X-ray diffraction technique with synchrotron radiation and an imaging plate detector. The equation-of-state parameters of the two high-pressure phases of ZnTe were for the first time derived to be B 0 = 91.3 ( 7.0 ) GPa and B 0 ′ = 0.8 ( 1.0 ) for the cinnabar-type phase and B 0 = 134 ( 5 ) GPa and B 0 ′ = 2.4 ( 1 ) for the Cmcm-type phase, respectively.
Keywords :
C. X-ray scattering , D. Phase transitions , D. Crystal binding and equation of state , A. Semiconductors
Journal title :
Solid State Communications
Journal title :
Solid State Communications