Title of article :
The performance of Pt bottom electrode and PZT films deposited on Al2O3 /Si substrate by using LaNiO3 film as an adhesion layer
Author/Authors :
Guo، نويسنده , , Yiping and Akai، نويسنده , , Daisuke and Sawada، نويسنده , , Kazuaki and Ishida، نويسنده , , Makoto، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
413
To page :
417
Abstract :
A (110) preferred Pt electrode by using a (100)-oriented conductive oxide electrode LaNiO3 film as an adhesion layer on a γ - Al2O3 (100)/Si substrate has been deposited by RF magnetron sputtering. It was found that the phase instability of LaNiO3 almost has no effect on the (110)-orientated Pt growth. Highly (110)-textured Pb(Zr0.40Ti0.60)O3 films can been achieved when it was deposited on the (110) preferred Pt bottom electrode. The as-grown Pb(Zr0.40Ti0.60)O3 films possesses excellent dielectric, ferroelectric and pyroelectric properties. The results indicate that the Pt / LNO / γ - Al2O3/Si substrate is attractive for depositing highly (110)-orientated ferroelectric films with perovskite structure and the highly (110)-orientated Pb(Zr0.4Ti0.60)O3 films are promising for sensor and actuator applications.
Keywords :
A. PZT , B. Chemical solution deposition , D. Ferroelectricity , D. (110)-oriented
Journal title :
Solid State Communications
Serial Year :
2008
Journal title :
Solid State Communications
Record number :
1764155
Link To Document :
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