Author/Authors :
Xu، نويسنده , , Jun and Zhou، نويسنده , , Jiang-hong Yao، نويسنده , , Yao and Cen، نويسنده , , Zhanhong and Song، نويسنده , , Fenqi and Xu، نويسنده , , Ling-Shu Wan، نويسنده , , Jianguo and Chen، نويسنده , , Kunji، نويسنده ,
Abstract :
Dense Si nano-dots with a surface area density of >1010 cm−2 were fabricated by excimer laser induced crystallization of 15 nm-thick amorphous Si thin films. The enhanced electron field emission characteristics were found from laser irradiated samples. The threshold electric field is as low as 9.8V/μm and the field enhancement factor can reach as large as 719, which is compatible with the other good cold cathode materials. The improvements in field emission behavior can be associated with the change in the surface morphology after laser irradiation as well as the enhanced internal electric field due to the formation of Si nano-dots within the films.
