Title of article
Band structure related wave-function symmetry of amphoteric Si dopants in GaAs
Author/Authors
Loth، نويسنده , , S. and Wenderoth، نويسنده , , M. and Teichmann، نويسنده , , K. and Ulbrich، نويسنده , , R.G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
551
To page
555
Abstract
Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunnelling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acceptors under the (110) cleavage plane are imaged with high resolution. Si(Ga) donor atoms exhibit radially symmetrical contrasts. Si(As) acceptors have anisotropic features. The anisotropic acceptor contrasts are traced back to a tunnel process at the valence band edge. They reflect the probability density distribution of the localized acceptor hole state.
Keywords
C. Scanning tunnelling microscopy , C. Impurities in semiconductors , D. Electronic band structure , A. Semiconductors
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764184
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