Title of article :
Raman scattering and X-ray diffraction study in Cu2GeSe3
Author/Authors :
Marcano، نويسنده , , G. and Rincَn، نويسنده , , C. and Marيn، نويسنده , , G. and Delgado، نويسنده , , G.E. and Mora، نويسنده , , A.J. and Herrera-Pérez، نويسنده , , J.L. and Mendoza-Alvarez، نويسنده , , J.G. and Rodrيguez، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
4
From page :
65
To page :
68
Abstract :
A combined study of X-ray diffraction data and micro-Raman scattering of Cu2GeSe3 is presented. From the analysis of the X-ray data it is confirmed that this compound crystallizes in an orthorhombic cell, space group I m m 2 . From Raman spectra, optical modes are identified and their possible symmetry assignments are suggested. Peaks at 212, 266 and 300 cm−1, tentatively assigned to B2 modes, agree well with those reported from infrared reflectivity. The most strong peak at 189 cm−1 which is only Raman active is assigned to one of the two A2 modes. Lines at 135, 235 and 254 cm−1 are attributed to A1 or B1 modes. The highest phonon frequency band, observed at 385 cm−1, probably comprises the remaining A2 mode and an overtone from the strong line at 189 cm−1.
Keywords :
D. Optical properties , A. Semiconductors , D. Raman scattering , E. Elastic light scattering
Journal title :
Solid State Communications
Serial Year :
2008
Journal title :
Solid State Communications
Record number :
1764208
Link To Document :
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