Author/Authors :
Bolotin، نويسنده , , K.I. and Sikes، نويسنده , , K.J. and Jiang، نويسنده , , Z. and Klima، نويسنده , , M. and Fudenberg، نويسنده , , G. and Hone، نويسنده , , J. and Kim، نويسنده , , P. and Stormer، نويسنده , , H.L.، نويسنده ,
Abstract :
We have achieved mobilities in excess of 200,000 cm2 V −1 s−1 at electron densities of ∼2 ×1011 cm−2 by suspending single layer graphene. Suspension ∼150 nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, nonsuspended devices. This advance should allow for accessing the intrinsic transport properties of graphene.
