Title of article :
Ferromagnetism in polycrystalline Cr-doped ZnO films: Experiment and theory
Author/Authors :
Li، نويسنده , , Luyan and Liu، نويسنده , , Hui and Luo، نويسنده , , Xiaoguang and Zhang، نويسنده , , Xiao and Wang، نويسنده , , Weihua and Cheng، نويسنده , , Yahui and Song، نويسنده , , Qinggong، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
420
To page :
424
Abstract :
Room-temperature ferromagnetism is found in polycrystalline CrxZn1−xO ( 0 ≤ x ≤ 0.091 ) films prepared by magnetron sputtering. The saturated magnetization is ∼ 0.58 μB/Cr with x = 0.012 , and decreases with increased Cr dopant. The Curie temperatures of the samples are above 400 K. First principles calculations based on density functional theory predict that the electrons of Cr-doped ZnO films at Fermi level are 100% spin polarized when two Zn sites are substituted by Cr atoms in the nearest neighbour configuration. The spin polarized carriers and the p–d hybridization between Cr and its four neighbouring O atoms are responsible for observed ferromagnetism.
Keywords :
A. Diluted magnetic semiconductor , A. Cr-doped ZnO films , D. Room-temperature ferromagnetism , C. Band structure
Journal title :
Solid State Communications
Serial Year :
2008
Journal title :
Solid State Communications
Record number :
1764269
Link To Document :
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