Author/Authors :
Croitoru، نويسنده , , M.D. and Gladilin، نويسنده , , V.N and Fomin، نويسنده , , V.M and Devreese، نويسنده , , J.T. and Magnus، نويسنده , , W. and Schoenmaker، نويسنده , , W. and Sorée، نويسنده , , B.، نويسنده ,
Abstract :
Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I–V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device.
