Title of article
Antiferroelectric phase transition in SbSI and SbSeI crystals
Author/Authors
Audzijonis، نويسنده , , Algirdas and Sereika، نويسنده , , Raimundas and ?altauskas، نويسنده , , Raimundas، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
2
From page
88
To page
89
Abstract
This work represents existence of the high temperature antiferroelectric phase transitions in SbSI, SbSeI and BiSeI crystals. The antiferrolectric phase transition is found by a measured capacitance change at a frequency of 1 kHz for the SbSI and SbSeI crystals grown by the Bridgman–Stockbarger technique in the temperature range of 270–440 K. Therefore, SbSI has three phases: ferroelectric ( T < 295 K ), antiferroelectric ( 295 < T < 410 K ) and paraelectric ( T > 410 K ). SbSeI has two phases: antiferroelectric ( T < 410 K ) and paraelectric ( T > 410 K ). The antiferroelectric phase transition is of an intermediate type between displacive and order–disorder types.
Keywords
A. Ferroelectrics , C. Phase transitions , E. Capacitance
Journal title
Solid State Communications
Serial Year
2008
Journal title
Solid State Communications
Record number
1764316
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