• Title of article

    Antiferroelectric phase transition in SbSI and SbSeI crystals

  • Author/Authors

    Audzijonis، نويسنده , , Algirdas and Sereika، نويسنده , , Raimundas and ?altauskas، نويسنده , , Raimundas، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    2
  • From page
    88
  • To page
    89
  • Abstract
    This work represents existence of the high temperature antiferroelectric phase transitions in SbSI, SbSeI and BiSeI crystals. The antiferrolectric phase transition is found by a measured capacitance change at a frequency of 1 kHz for the SbSI and SbSeI crystals grown by the Bridgman–Stockbarger technique in the temperature range of 270–440 K. Therefore, SbSI has three phases: ferroelectric ( T < 295 K ), antiferroelectric ( 295 < T < 410 K ) and paraelectric ( T > 410 K ). SbSeI has two phases: antiferroelectric ( T < 410 K ) and paraelectric ( T > 410 K ). The antiferroelectric phase transition is of an intermediate type between displacive and order–disorder types.
  • Keywords
    A. Ferroelectrics , C. Phase transitions , E. Capacitance
  • Journal title
    Solid State Communications
  • Serial Year
    2008
  • Journal title
    Solid State Communications
  • Record number

    1764316