Title of article :
Analytic expression for electronic density of states in random media with weak scattering potential
Author/Authors :
Pinsook، نويسنده , , Udomsilp and Sa-yakanit، نويسنده , , Virulh، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
4
From page :
42
To page :
45
Abstract :
We evaluate the electronic density of states (DOS) in random media by using the expression from the variational path integral theory. The scattering potential is modeled by a Gaussian function. By imposing the limit of weak scattering, the full spectrum DOS can be approximated by an analytical method. The solution has several features; in the extended states, it is essentially proportional to E . In the localized states, it resembles an exponential tail. However, this tail has less population than that of the compatible Kane DOS. The total energy of the system is lowered by E α , depending linearly on the density of scatterers. Our results give good description to the photoluminescence spectra of Si:P and the tunneling measurement of GaAs.
Keywords :
A. Semiconductors , C. Impurities in semiconductors , D. Electronic band structure
Journal title :
Solid State Communications
Serial Year :
2008
Journal title :
Solid State Communications
Record number :
1764470
Link To Document :
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