• Title of article

    Kondo resonance in an AC driven quantum dot subjected to finite bias

  • Author/Authors

    Goker، نويسنده , , A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    230
  • To page
    233
  • Abstract
    We employ the time-dependent non-crossing approximation to study the time-averaged conductance for a single electron transistor in the Kondo regime when the dot level is sinusoidally driven from its equilibrium position by means of a gate voltage in finite bias. We find that the average conductance exhibits significant deviation from the monotonic reduction when the applied bias is equal to the driving frequency of the dot level. We investigate the effect of the temperature and the driving frequency on the observed enhancement. We attribute this behaviour to the overlap of the satellite Kondo peaks with the split Kondo resonances formed at each lead’s Fermi level. We display the spectral function to put our interpretation onto more rigorous footing.
  • Keywords
    D. Tunneling , A. Quantum dots
  • Journal title
    Solid State Communications
  • Serial Year
    2008
  • Journal title
    Solid State Communications
  • Record number

    1764557