Author/Authors :
Yang، نويسنده , , Zhaozhu and Xue، نويسنده , , Chengshan and Zhuang، نويسنده , , Huizhao and Wang، نويسنده , , Gongtang and Chen، نويسنده , , Jinhua and Li، نويسنده , , Hong and Qin، نويسنده , , Lixia and Zhang، نويسنده , , Dongdong and Huang، نويسنده , , Yinglong، نويسنده ,
Abstract :
β-Ga2O3nanostructured materials have been obtained on Si(111) substrates by annealing the Ga2O3/V films at different temperatures. X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum were used to analyze the structure, morphology and optical properties of β-Ga2O3 nanostructured films. These properties were investigated particularly as a function of annealing temperature. Our results indicate that the β-Ga2O3 nanorods annealed at 950 ∘C have the best morphology and crystallinity. These nanorods are pure monoclinic Ga2O3 structures with lengths of about 5 μm and diameters of about 180 nm, which is conducive to the application of nanodevices. Finally, the growth mechanism is also discussed briefly.
Keywords :
A. Gallium , A. Nanorods , B. Crystal growth , D. Optical properties
