Localised states in the band gap of chalcogenide glass-like semiconductors of Se–As system with Sm impurity

It is established that transfer of charge carriers (holes) in Al–Se95As5–Te structure has been carried out by monopolar injection current mechanism limited by space charges with two groups of capture traps (shallow ( E t 1 ) corresponding to charged intrinsic defects C 1 − due to the broken bounds of Se and deep ( E t 2 ) also corresponding to charged intrinsic defects P 2 − due to As atoms with broken coordination). It is shown that Sm impurity heavily influences the mechanism of the path of current flow and capture trap parameters (energy position and concentration); they especially influence deep traps related to charged intrinsic defects P 2 − due to As atoms with broken coordination.