Title of article
Mn doping concentration dependent p–d hybridization in
Author/Authors
Wang، نويسنده , , Dan and Zhang، نويسنده , , Xinyi and Wang، نويسنده , , Jie and Koide، نويسنده , , Tsuneharu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
192
To page
195
Abstract
The 3d electronic states of transition-metal Mn dopants in Ga 1 − x Mn x N have been investigated by Mn L -edge X-ray absorption spectroscopy (XAS) measurements. Through the XAS analysis, the valence of the Mn ions is determined. With the increase of doping concentration, the integrated intensities of L 2 , 3 vary not monotonously, but increase first and then decrease. The relationship between the Mn doping concentration and the degree of p–d hybridization is discussed.
Keywords
D. p–d hybridization , E. X-ray absorption , A. Ga 1 ? x Mn x N
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1764842
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