Si nanowire p-FET with asymmetric source–drain characteristics

We report on the electrical characteristics and the effects of source/drain Schottky barrier heights (SBHs) in a lightly implanted silicon nanowire field-effect transistor (SiNW FET). We prepared the SiNW FETs by boron implantation with a dose of 1×1012 ions/cm2 and an energy of 10 keV. Our results indicated that the nature of the metal-contacts on the source/drain electrodes had a significant impact on the current–voltage characteristics for B-implanted SiNW FETs. The current–voltage ( I D – V D S ) characteristics for the B-implanted SiNW FETs with a symmetric IV behavior exhibited a clear p-channel FET behavior with a field-effect mobility of ∼0.4 cm2/V s and a hole concentration of ∼1.7×1017 cm−3. A 2D ATLAS simulation (SILVACO Inc.) with two different Schottky barrier heights of source/drain contacts to the SiNW supported the experimental results well.