Title of article
Dielectric audio-frequency dispersion in Ba(Ti Sn)O ferroelectrics
Author/Authors
Wang، نويسنده , , Xiaoli and Li، نويسنده , , Bo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
537
To page
539
Abstract
Dielectric audio-frequency dispersion behavior exists in both BaTiO3 ferroelectric and Ba(Ti1−xSnx)O3 relaxors. It is suggested that defect dipoles trapped by random electric fields E r are the origin of the dielectric audio-frequency dispersion. E r originates from ferroelectric domains and polar regions, and becomes weaker as temperature increases. Consequently, defect dipoles are being continually released from trapped states to take part in the dielectric response under an applied ac field with increasing temperature. The temperature T m of maximum permittivity ε m for Ba(Ti1−xSnx)O3 ceramics becomes frequency-dependent when the permittivity contributed by defect dipoles is large enough.
Keywords
A. Ferroelectrics , D. Dielectric response , D. Phase transition
Journal title
Solid State Communications
Serial Year
2009
Journal title
Solid State Communications
Record number
1765017
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