• Title of article

    Electronic structure of LiGaS2

  • Author/Authors

    Atuchin، نويسنده , , V.V. and Isaenko، نويسنده , , L.I. and Kesler، نويسنده , , V.G. and Lobanov، نويسنده , , S. and Huang، نويسنده , , H. and Lin، نويسنده , , Z.S.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    4
  • From page
    572
  • To page
    575
  • Abstract
    X-ray photoelectron spectroscopy (XPS) measurement has been performed to determine the valence band structure of LiGaS2 crystals. The experimental measurement is compared with the electronic structure obtained from the density functional calculations. It is found that the Ga 3d states in the XPS spectrum are much higher than the calculated results. In order to eliminate this discrepancy, the LDA+U method is employed and reasonable agreement is achieved. Further calculations show that the difference of the linear and nonlinear optical coefficients between LDA and LDA+U calculations is negligibly small, indicating that the Ga 3d states are actually independent of the excited properties of LiGaS2 crystals since they are located at a very deep position in the valence bands.
  • Keywords
    D. Electronic band structure , E. Photoelectron spectroscopies
  • Journal title
    Solid State Communications
  • Serial Year
    2009
  • Journal title
    Solid State Communications
  • Record number

    1765031