Title of article :
The preparation of a ZnO varistor doped with and its properties
Author/Authors :
Nahm، نويسنده , , Choon-W، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
795
To page :
798
Abstract :
ZnO varistors doped with Pr 6 O 11 – CoO – Cr 2 O 3 – Y 2 O 3 – Al 2 O 3 were prepared at different sintering temperatures and their properties were investigated. The average grain size increased to 4.3 – 11.3 μ m with the increase of sintering temperature. However, the sintering temperature does not have an effect on the sintered density. The breakdown field greatly decreased from 6327 to 1974 V/cm, exhibiting a wide voltage gradient with the increase of sintering temperature. However, the nonlinear coefficient was almost unaffected by the sintering temperature: it was in the range 43.7–41.9. The varistor sintered at 1350 ∘ C exhibited the highest stability against DC accelerated aging stress ( 0.95 E B / 150 ∘ C / 24 h ); the variation rates of breakdown field and nonlinear coefficient are −0.3% and −6.7%, respectively.
Keywords :
A. ZnO , D. Electrical properties , C. Grain boundaries , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1765156
Link To Document :
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